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IRFU9120N specifiche: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A
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IRFU9120N datasheet e spec
Fabbricante : IR
Viaggi : I-PAK
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 128 KB
Applicazione : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A
IRFU9120N PDF Download