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IRFU9N20D specifiche: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
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IRFU9N20D datasheet e spec
Fabbricante : IR
Viaggi : I-PAK
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 138 KB
Applicazione : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
IRFU9N20D PDF Download