Percorso:OKDatasheet > Tutti i fornitori > IR Scheda > IRG4BC10SD-S
IRG4BC10SD-S specifiche: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Percorso:OKDatasheet > Tutti i fornitori > IR Scheda > IRG4BC10SD-S
IRG4BC10SD-S specifiche: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Fabbricante : IR
Viaggi : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 238 KB
Applicazione : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A