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IRGBC30M-S specifiche: Insulated gate bipolar transistor
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IRGBC30M-S datasheet e spec
Fabbricante : IR
Viaggi : SMD-220
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 274 KB
Applicazione : Insulated gate bipolar transistor
IRGBC30M-S PDF Download