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IRGBF30F specifiche: Insulated gate bipolar transistor
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IRGBF30F datasheet e spec
Fabbricante : IR
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 278 KB
Applicazione : Insulated gate bipolar transistor
IRGBF30F PDF Download