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PVN012S-T specifiche: HEXFET power MOSFET photovoltaic relay
PVN012S-T datasheet e spec
Fabbricante : IR
Viaggi : DIP
Pins : 6
Temperatura : Min -40 °C | Max 85 °C
Dimensione : 269 KB
Applicazione : HEXFET power MOSFET photovoltaic relay
PVN012S-T PDF Download