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IXBT42N170 specifiche: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
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- IXBT42N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT42N170 datasheet e spec
Fabbricante : IXYS
Viaggi : TO-268
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 54 KB
Applicazione : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT42N170 PDF Download