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IXGT31N60D1 specifiche: 600V HiPerFET power MOSFET
IXGT31N60D1 simili
- IXGT15N120B
- 1200V HiPerFAST IGBT
- IXGT15N120BD1
- 1200V low voltage IGBT with diode
- IXGT15N120C
- 1200V IGBT
- IXGT15N120CD1
- 1200V low voltage IGBT with diode
- IXGT20N100
- 1000V IGBT
- IXGT20N60B
- 600V HiPerFAST IGBT
- IXGT20N60BD1
- 600V HiPerFAST IGBT with diode
- IXGT24N60C
- 600V HiPerFAST IGBT
IXGT31N60D1 datasheet e spec
Fabbricante : IXYS
Viaggi : TO-268
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 58 KB
Applicazione : 600V HiPerFET power MOSFET
IXGT31N60D1 PDF Download