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FSYC163D specifiche: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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FSYC163D datasheet e spec
Fabbricante : Intersil
Viaggi :
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 67 KB
Applicazione : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC163D PDF Download