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FSYE913A0D specifiche: Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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FSYE913A0D datasheet e spec
Fabbricante : Intersil
Viaggi :
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 80 KB
Applicazione : Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYE913A0D PDF Download