| Parte n. | Fabbricante | Applicazione |
|---|
| SF26 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 2.0 A. |
| P6KE82CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. Bidirectional. |
| FR155G | JGD | 1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| SF14 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A. |
| 1EZ130D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 130V at 1.9mA. |
| 1N5927A | JGD | 1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-10% tolerance. |
| FR601G | JGD | 6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
| 6A8G | JGD | 6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 800 V. |
| KBPC300 | JGD | Single phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5923 | JGD | 1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-20% tolerance. |
| BY255 | JGD | 3.0 A silicon rectifier. Max recurrent peak reverse voltage 1300 V. |
| 1N5944B | JGD | 1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-5% tolerance. |
| ZMM55-D33 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 31-35 V. Test current 5 mA. +-20% tolerance. |
| KBPC1002 | JGD | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. |
| KBPC602G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. |
| ZMM5230D | JGD | Surface mount zener diode. Nominal zener voltage 4.7 V. Test current 20 mA. +-20% tolerance. |
| 1N4741 | JGD | 1W zener diode. Nominal zener voltage 11V. 10% tolerance. |
| 3EZ160D4 | JGD | 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-4% tolerance. |
| RB153G | JGD | Miniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V. |
| KBU608 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| ZMM5236B | JGD | Surface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-5% tolerance. |
| 1N4620 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.3V. |
| 1N5943B | JGD | 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-5% tolerance. |
| SMAJ64A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. |
| 3EZ91D1 | JGD | 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-1% tolerance. |
| SMAJ28A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 28 V. |
| SMBJ170C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 189 V (min), 231 V (max). Test current 1.0 mA. Bidirectional. |
| P6KE8.2C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V. Bidirectional. |
| 3EZ100D10 | JGD | 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance. |
| RB156G | JGD | Miniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 800 V. |
