Percorso:OKDatasheet > Tutti i fornitori > MDE Semiconductor Scheda > P4KE51
P4KE51 specifiche: 41.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE51 simili
- P4KE75
- 60.70V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE440
- 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE12A
- 10.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE180
- 146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE220
- 175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE200
- 162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE39
- 31.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE12
- 9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE51 datasheet e spec
Fabbricante : MDE Semiconductor
Viaggi :
Pins : 2
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 928 KB
Applicazione : 41.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE51 PDF Download