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P4KE8.2 specifiche: 6.63V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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P4KE8.2 datasheet e spec
Fabbricante : MDE Semiconductor
Viaggi :
Pins : 2
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 928 KB
Applicazione : 6.63V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE8.2 PDF Download