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| Parte n. | Applicazione |
|---|---|
| BUZ905DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
| BCU83 | NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications reguiring low loss devices. |
| BUZ901DP | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
| BUZ903 | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| SMX35 | Silicon NPN epitaxial planar power transistor. |
| BCU83D | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| BUZ900P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. |
| BUZ900P | N-channel power MOSFET for audio applications, 160V |
| BUZ905P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
| BUL74B | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BCU81 | NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring low loss devices. |
| BUZ906P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ900D | N-channel power MOSFET for audio applications, 160V |
| BUZ906X4S | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ906DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ901P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
| BCU86 | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| BUZ901D | N-channel power MOSFET for audio applications, 200V |
| BUZ907D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
| BUZ902P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
| BUZ908D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUL54A | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BUZ908P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUZ903D | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| BUZ907P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
| T64 | PNP silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications. |
| BCU86D | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| SMX37 | Silicon NPN epitaxial planar power transistor. |
Magnatec Profilo
MagnatecSchede di catalogo
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