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BC261 simili

  • BC261
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC262
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC263
    • 360mW PNP high gain low noise silicon planar epitaxial transistor

BC261 datasheet e spec

Fabbricante : Micro Electronics 

Viaggi : TO-18 

Pins : 3 

Temperatura : Min -65 °C | Max 200 °C

Dimensione : 103 KB

Applicazione : 360mW PNP high gain low noise silicon planar epitaxial transistor 

BC261 PDF Download