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MT58V512V36DF-10 specifiche: 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns
MT58V512V36DF-10 simili
- MT58L1MY18DF-6
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns
- MT58L1MY18DF-7.5
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns
- MT58L1MY18DT-10
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns
- MT58L1MY18DT-10
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns
- MT58L1MY18DT-6
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns
- MT58L1MY18DT-7.5
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns
- MT58L512Y32DF-10
- "3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 10ns"
- MT58L512Y32DF-7.5
- 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 7.5ns
MT58V512V36DF-10 datasheet e spec
Fabbricante : Micron
Viaggi : FBGA
Pins : 165
Temperatura : Min 0 °C | Max 70 °C
Dimensione : 578 KB
Applicazione : 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns
MT58V512V36DF-10 PDF Download