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BUL45D2 specifiche: High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 simili
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- High speed, high gane bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
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- BUL45D2
- High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 datasheet e spec
Fabbricante : Motorola
Viaggi :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 488 KB
Applicazione : High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 PDF Download