Percorso:OKDatasheet > Tutti i fornitori > Motorola Scheda > MTB50N06VL
MTB50N06VL specifiche: TMOS V power field effect transistor D2PAK for surface mount
MTB50N06VL simili
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB50N06VL datasheet e spec
Fabbricante : Motorola
Viaggi : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 273 KB
Applicazione : TMOS V power field effect transistor D2PAK for surface mount
MTB50N06VL PDF Download