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MTB6N60E1 specifiche: TMOS E-FET high energy power FET D2PAK for surface mount
MTB6N60E1 simili
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- MTB6N60E1
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB6N60E1 datasheet e spec
Fabbricante : Motorola
Viaggi : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 175 KB
Applicazione : TMOS E-FET high energy power FET D2PAK for surface mount
MTB6N60E1 PDF Download