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MTD8N06E specifiche: TMOS E-FET power field effect transistor D2PAK for surface mount
MTD8N06E simili
- MTD8N06E
- TMOS E-FET power field effect transistor D2PAK for surface mount
MTD8N06E datasheet e spec
Fabbricante : Motorola
Viaggi : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 203 KB
Applicazione : TMOS E-FET power field effect transistor D2PAK for surface mount
MTD8N06E PDF Download