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MTP12N10E specifiche: TMOS E-FET power field effect transistor
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MTP12N10E datasheet e spec
Fabbricante : Motorola
Viaggi :
Pins : 4
Temperatura : Min -55 °C | Max 170 °C
Dimensione : 262 KB
Applicazione : TMOS E-FET power field effect transistor
MTP12N10E PDF Download