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MTP3N60E specifiche: TMOS E-FET high energy power FET
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MTP3N60E datasheet e spec
Fabbricante : Motorola
Viaggi :
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 201 KB
Applicazione : TMOS E-FET high energy power FET
MTP3N60E PDF Download