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MTV6N100E specifiche: TMOS E-FET power field effect transistor D3PAK for surface mount
MTV6N100E simili
- MTV6N100E
- TMOS E-FET power field effect transistor D3PAK for surface mount
MTV6N100E datasheet e spec
Fabbricante : Motorola
Viaggi : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 288 KB
Applicazione : TMOS E-FET power field effect transistor D3PAK for surface mount
MTV6N100E PDF Download