MTW45N10E specifiche: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW45N10E simili

MTW45N10E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW45N10E datasheet e spec

Fabbricante : Motorola

Viaggi : TO-247AE

Pins : 4

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 170 KB

Applicazione : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole