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NE321000 specifiche: A GaAs HJ-FET chip for ultra low-noise high-gain amplification
NE321000 simili
- NE321000
- A GaAs HJ-FET chip for ultra low-noise high-gain amplification
- NE3210S01
- N-channel HJ-FET
- NE3210S01-T1
- N-channel HJ-FET
- NE3210S01-T1B
- N-channel HJ-FET
- NE32484A
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
NE321000 datasheet e spec
Fabbricante : NEC
Viaggi : Chip
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 52 KB
Applicazione : A GaAs HJ-FET chip for ultra low-noise high-gain amplification
NE321000 PDF Download