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NE4210S01-T1B specifiche: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B simili
- NE4210M01-T1
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE425S01-T1
- N-channel HJ-FET
- NE429M01
- N-channel HJ-FET
- NE429M01-T1
- N-channel HJ-FET
NE4210S01-T1B datasheet e spec
Fabbricante : NEC
Viaggi : 4-pin u-x type mold
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 71 KB
Applicazione : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B PDF Download