| Parte n. | Fabbricante | Applicazione |
|---|
| 2SJ357-T2 | NEC | P-channel MOS FET(-30V, +-3A) |
| UPC324C(5) | NEC | Quad operational amplifier |
| UPA821TF | NEC | Twin transistors equipped with the same model chip(6P small MM) |
| RD27E-T2 | NEC | 500mW Zener diode |
| 2SJ196-T/JM | NEC | P-channel MOS FET |
| RD11M-T2B | NEC | 200mW Zener diode |
| RD3.0ES-T2 | NEC | 400mW Zener diode |
| UPD78062YGF-XX-3BA | NEC | 8-bit single-chip microcontroller, 16K ROM, 512 RAM, 40x4-bits LCD RAM |
| RD18FMB | NEC | 1W zener diode, 18V |
| PS2534-2 | NEC | High collector to emitter voltage, high isolation voltage, multi photocoupler |
| MC-458CA726LFA-A80 | NEC | 64M-byte(8M-word x 72-bit) SDRAM DIMM |
| 2SC5336-T1 | NEC | High-gain transistor |
| NEZ5964-3AM | NEC | GaAs FET |
| EP1F-B3N3 | NEC | DC Motor Control(Lock current 25A max.) |
| 2SC5013-T1/-T2 | NEC | NPN epitaxial-type silicon transistor |
| NNCD5.6E | NEC | Zener diode ESD, surge protection |
| UPD78P014DW | NEC | 8-bit single-chip microcomputer |
| 2SC4955-T2 | NEC | Microwave low-noise amplification silicon transistor |
| SVFC1D475M | NEC | Resign molded chip fuse built-in |
| MC-4516DA727LF-A75 | NEC | 128M-byte(16M-word x 72-bit) SDRAM DIMM |
| NEZ7785-4DD | NEC | C-band 15W Po GaAs FET |
| NE321000 | NEC | A GaAs HJ-FET chip for ultra low-noise high-gain amplification |
| UPD16335 | NEC | High voltage CMOS driver 96-output 80V 50mA |
| 2SC3841-L | NEC | For UHF tuner, MIXER and OSC. |
| RD6.8EB2 | NEC | 0.5W DHD zener diode, 6.8V |
| RD4.7E-T4 | NEC | 500mW Zener diode |
| UPD45D128164G5-C80-9LG | NEC | 128M-bit(2M-word x 16-bit x 4-bank)DDR SDRAM |
| RD2.2F-T7 | NEC | 1W Zener diode |
| RD2.0ES-T2 | NEC | 400mW Zener diode |
| UPC1686GV | NEC | Bipolar analog integrated circuit |
