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UPA1770G-E1 specifiche: P-channel enhancement type power MOS FET(Dual type)
UPA1770G-E1 simili
- UPA101G
- Ultra-high-frequency NPN transistor array
- UPA101G-E1
- Ultra-high-frequency NPN transistor array
- UPA102B
- Ultra-high-frequency NPN transistor array
- UPA102B-E1
- Ultra-high-frequency NPN transistor array
- UPA102G
- Ultra-high-frequency NPN transistor array
- UPA102G-E1
- Ultra-high-frequency NPN transistor array
- UPA102P
- Ultra-high-frequency NPN transistor array
- UPA103B
- Ultra-high-frequency NPN transistor array
UPA1770G-E1 datasheet e spec
Fabbricante : NEC
Viaggi : 8-P-SOP
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 72 KB
Applicazione : P-channel enhancement type power MOS FET(Dual type)
UPA1770G-E1 PDF Download