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NTE213 specifiche: Germanium PNP transistor. High power, high gain amplifier.
NTE213 simili
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- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
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- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE213 datasheet e spec
Fabbricante : NTE Electronic
Viaggi : TO36
Pins : 2
Temperatura : Min -65 °C | Max 110 °C
Dimensione : 25 KB
Applicazione : Germanium PNP transistor. High power, high gain amplifier.
NTE213 PDF Download