Percorso:OKDatasheet > Tutti i fornitori > NTE Electronic Scheda > NTE2319
NTE2319 specifiche: Silicon NPN transistor. High voltage, high speed power switch.
NTE2319 simili
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE2319 datasheet e spec
Fabbricante : NTE Electronic
Viaggi : TO3
Pins : 2
Temperatura : Min -65 °C | Max 200 °C
Dimensione : 28 KB
Applicazione : Silicon NPN transistor. High voltage, high speed power switch.
NTE2319 PDF Download