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MGP4N60ED specifiche: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGP4N60ED datasheet e spec
Fabbricante : ON Semiconductor
Viaggi : TO-220
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 160 KB
Applicazione : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGP4N60ED PDF Download