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MGW21N60ED specifiche: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED simili
- MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
- MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED datasheet e spec
Fabbricante : ON Semiconductor
Viaggi : TO-247
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 167 KB
Applicazione : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED PDF Download