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MGY20N120D specifiche: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY20N120D simili
- MGY20N120D
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- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY20N120D datasheet e spec
Fabbricante : ON Semiconductor
Viaggi : TO-3PBL
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 188 KB
Applicazione : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY20N120D PDF Download