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KBU8D specifiche: Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 200 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A.

KBU8D simili

  • KBU8A
    • Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 50 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A.
  • KBU8B
    • Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 100 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A.
  • KBU8D
    • Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 200 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A.
  • KBU8J
    • Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 600 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A.
  • KBU8K
    • Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 800 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A.

KBU8D datasheet e spec

Fabbricante : PanJit 

Viaggi : KBU 

Pins : 4 

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 60 KB

Applicazione : Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 200 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A. 

KBU8D PDF Download