VTE3324LA specifiche: GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).

VTE3324LA simili

VTE3322LA
- GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3324LA
- GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3372LA
- "GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm)."
VTE3374LA
- GaALAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).

VTE3324LA datasheet e spec

Fabbricante : PerkinElmer

Viaggi : T-1

Pins : 2

Temperatura : Min -40 °C | Max 100 °C

Dimensione : 24 KB

Applicazione : GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).