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BUK555-100B specifiche: PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B simili
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100B
- 100 V, power MOS transistor
- BUK542-60A
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
- BUK543-100A
- 100 V, power MOS transistor
BUK555-100B datasheet e spec
Fabbricante : Philips
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 59 KB
Applicazione : PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B PDF Download