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BUK555-200A specifiche: 200 V, power MOS transistor
BUK555-200A simili
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- 100 V, power MOS transistor
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100B
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- BUK542-60A
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
- BUK543-100A
- 100 V, power MOS transistor
BUK555-200A datasheet e spec
Fabbricante : Philips
Viaggi : SOT
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Dimensione : 60 KB
Applicazione : 200 V, power MOS transistor
BUK555-200A PDF Download