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BUK555-200B specifiche: PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B simili
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100A
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- BUK542-100B
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- BUK542-60A
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK542-60B
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- BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
- BUK543-100A
- 100 V, power MOS transistor
BUK555-200B datasheet e spec
Fabbricante : Philips
Viaggi : TO220AB
Pins : 3
Temperatura : Min 0 °C | Max 175 °C
Dimensione : 76 KB
Applicazione : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B PDF Download