IRF830 simili

  • IRF830
    • 500 V, Power MOS transistor avalanche energy rated
  • IRF840
    • 500 V, Power MOS transistor avalanche energy rated

IRF830 datasheet e spec

Fabbricante : Philips 

Viaggi : SOT 

Pins : 3 

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 63 KB

Applicazione : 500 V, Power MOS transistor avalanche energy rated 

IRF830 PDF Download