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PHB6N60E specifiche: 600 V, power MOS transistor avalanche energy rated
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PHB6N60E datasheet e spec
Fabbricante : Philips
Viaggi : SOT
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 81 KB
Applicazione : 600 V, power MOS transistor avalanche energy rated
PHB6N60E PDF Download