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PHD2N60E specifiche: PowerMOS transistor. Avalanche energy rated.
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PHD2N60E datasheet e spec
Fabbricante : Philips
Viaggi : SOT428
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 103 KB
Applicazione : PowerMOS transistor. Avalanche energy rated.
PHD2N60E PDF Download