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PHD6N10E specifiche: 100 V, power MOS transistor
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- PHD6N10E
- 100 V, power MOS transistor
- PHD6N10E
- PowerMOS transistor
PHD6N10E datasheet e spec
Fabbricante : Philips
Viaggi : SOT
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 62 KB
Applicazione : 100 V, power MOS transistor
PHD6N10E PDF Download