PHW8N50E simili

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    • 100 V, N-channel trenchMOS transistor
  • PHW80NQ10T
    • N-channel TrenchMOS transistor
  • PHW80NQ10T
    • N-channel TrenchMOS transistor
  • PHW80NQ10T
    • N-channel TrenchMOS transistor
  • PHW8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW8N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW8ND50E
    • 500 V, power MOS transistor FREDFET, avalanche energy rated

PHW8N50E datasheet e spec

Fabbricante : Philips 

Viaggi : TO247 

Pins : 3 

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 98 KB

Applicazione : PowerMOS transistor. Avalanche energy rated. 

PHW8N50E PDF Download