PHX23NQ10T simili

  • PHX23NQ10T
    • 100 V, N-channel trenchMOS transistor
  • PHX2N40E
    • 400 V, power MOS transistor isolated version of PHP4N40E
  • PHX2N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX2N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX2N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • PowerMOS transistor. Avalanche energy rated.

PHX23NQ10T datasheet e spec

Fabbricante : Philips 

Viaggi : SOT 

Pins : 3 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 69 KB

Applicazione : 100 V, N-channel trenchMOS transistor 

PHX23NQ10T PDF Download