PHX8N50E simili

  • PHX8N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8ND50E
    • PowerMOS transistor. FREDFET, avalanche energy rated.

PHX8N50E datasheet e spec

Fabbricante : Philips 

Viaggi : SOT 

Pins : 3 

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 81 KB

Applicazione : 500 V, power MOS transistor avalanche energy rated 

PHX8N50E PDF Download