F1018 specifiche: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1018 simili

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1018 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 41 KB

Applicazione : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor