F1034 specifiche: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 simili

F1034
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 34 KB

Applicazione : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor