F1040 specifiche: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 simili

F1040
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 35 KB

Applicazione : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor