F1070 specifiche: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1070 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 41 KB

Applicazione : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor