F1081 specifiche: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 simili

F1081
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 43 KB

Applicazione : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor